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| STS2601 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -20V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-26 package. ID -4.0A RDS(ON) (m) Max 80 @ VGS=-4.5V 110 @ VGS=-2.5V SOT 26 Top View D D D G 1 2 3 6 5 4 D D S S G ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a TA=25C TA=70C TA=25C TA=70C Limit -20 12 -4.0 -3.2 -16 2 1.28 -55 to 150 Units V V A A A W W C Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 C/W Details are subject to change without notice. Nov,17,2008 1 www.samhop.com.tw STS2601 Ver 1.0 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-16V , VGS=0V Min Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current -20 1 100 VGS= 10V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=-250uA VGS=-4.5V , ID=-4.0A VGS=-2.5V , ID=-3.4A VDS=-5.0V , ID=-4.0A -0.5 -0.8 60 80 4 586 101 59 -1.5 80 110 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr tD(OFF) tf Qg Qgs Qgd Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=-10V,VGS=0V f=1.0MHz VDD=-10V ID=-1A VGS=-4.5V RGEN=6 ohm VDS=-10V,ID=-4.0A, VGS=-4.5V 6.5 32.1 58.4 48 5.92 1.36 1.4 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage VGS=0V,IS=-1.25A -0.815 -1.25 -1.2 A V Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. Nov,17,2008 2 www.samhop.com.tw STS2601 Ver 1.0 10 -V G S =3.5V 25 25 C -55 C T j=125 C 15 -ID, Drain Current(A) -ID, Drain Current(A) 8 -V G S =4.5V -V G S =2.5V 20 6 4 2 -V G S =1.5V 10 5 0 0.0 0 0 2 4 6 8 10 12 0.5 1 1.5 2 2.5 3 -VDS, Drain-to-Source Voltage(V) -VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 120 100 V G S =-2.5V 80 60 V G S =-4.5V 40 20 1 Figure 2. Transfer Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0 V G S =-2.5V ID=-3.4A V G S =-4.5V ID=-4.0A 1 2 4 6 8 10 RDS(on), On-Resistance Normalized RDS(on)(m ) 0 25 50 75 100 125 -ID, Drain Current(A) Tj, Junction Temperature( C ) 150 T j ( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.3 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.10 ID=-250uA 1.07 1.04 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 V DS =V G S ID=-250uA 75 100 125 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,17,2008 3 www.samhop.com.tw STS2601 Ver 1.0 180 150 120 90 60 75 C 30 0 125 C 25 C 20 -Is, Source-drain current(A) ID=-4.0A 10 RDS(on)(m ) 2 T j=25 C 0 0 1 2 3 4 0.8 1.0 1.2 1.4 1.6 1.8 -VGS, Gate-to-Source Voltage(V) -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1000 800 600 400 200 0 0 C rss 5 10 15 20 25 30 C iss Figure 8. Body Diode Forward Voltage Variation with Source Current 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 Qg, Total Gate Charge(nC) V DS =-4.5V ID=-4.0A C oss -VDS, Drain-to-Source Voltage(V) Figure 9. Capacitance -VGS, Gate to Source Voltage(V) C, Capacitance(pF) Figure 10. Gate Charge 600 -ID, Drain Current(A) 70 it 10 0u s Switching Time(ns) 100 60 10 TD(off) Tf Tr 10 R DS (O N) L im TD(on) 10 1m ms s 1 VGS =-4.5V S ingle P ulse T A=25 C 1 DC 1 1 V DS =-10V,ID=-1A V G S =-4.5V 0.1 6 10 60 100 300 600 0.1 10 20 50 Rg, Gate Resistance() -VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,17,2008 4 www.samhop.com.tw STS2601 Ver 1.0 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH Figure 13. Switching Test Circuit Figure 14. Switching Waveforms 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 t2 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Nov,17,2008 5 www.samhop.com.tw STS2601 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SOT 26 Nov,17,2008 6 www.samhop.com.tw STS2601 Ver 1.0 SOT 26 Tape and Reel Data SOT 26 Carrier Tape 3.50 + 0.05 1.75 + 0.10 +0.10 1.50 0.00 4.00 + 0.10 2.00 + 0.05 A 8.0 + 0.30 B B A 0.25 + 0.05 4.00 + 0.10 3.3 + 0.1 5 R0 .3 +0.10 1.00 0.00 5M ax .3 R0 M ax Bo 3.2 + 0.1 R0 . 3 R0 . 1.50 178.0 + 0.5 9.0 -0 SOT 26 60 + 0.5 +1.5 Ko 1.5 + 0.1 SECTION A-A SOT 26 Reel 2.2 + 0.5 10.6 13.5 + 0.5 SCALE 2:1 3 SECTION B-B Nov,17,2008 7 www.samhop.com.tw |
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